HgCdTe Heterostructures Grown by MBE on Si(310) for Infrared Photodetectors

AFRL-OSR-VA-TR-2014-0375 Novel Substrates for Photodetectors

This research has investigated epitaxial InSb, CdTe, MgCdTe, and CdTe/MgCdTe double heterostructures grown on InSb (100) substrates using molecular beam epitaxy. State-ofthe-art materials quality has been successfully achieved in all of these materials, which have demonstrated record narrow X-ray diffraction line-widths, ultra-low defect density, and record long minority carrier lifetime of ove...

Electrical activation and electrical properties of arsenic doped Hg1.CdTe epilayers grown by MBE

The annealing and electrical properties of extrinsic in situ doped mercury cadmium telluride (Hg1.CdTe) epilayers grown by molecular beam epitaxy (MBE) on (211)B CdTe/Si and CdZnTe substrates are studied. The doping is performed with an elemental arsenic source. HgCdTe epilayers of CdTe mole fraction in the range of midwavelength infrared (MWIR) are grown at substrate temperatures of 175-185°C....

GaN/AlGaN strain-balanced heterostructures for near-IR quantum well photodetectors: Final report Contract: FA8655-02-M4006

This is the final report for a 1-year project funded by the European Office of Research and Development (EOARD). In this work GaN/AlGaN strain-balanced heterostructures have been designed for near-infrared absorption through intersubband transitions. By making use of existing collaborations with workers at the University of Sheffield and UMIST the semiconductor samples have been grown, characte...

Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates

Optical Constants for MBE n-Type GaAs Films Doped by Si or Te between 1.50-4.75 eV

The thickness and spectral dependence of the complex refractive index of upper layer in thin-film MBE-grown GaAs heterostructures were calculated basing on a classical oscillatory model of dielectric function from spectra measured by spectroscopic ellipsometry (nondestructive, contactless optical method) in the range of 1.5-4.75 eV.